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A Product Line of Diodes Incorporated
DMN6068SE
60V N-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
Product Summary
V(BR)DSS RDS(on) 68m @ VGS= 10V 60V 100m @ VGS= 4.5V 4.7A ID TA = 25C 5.6A
Features and Benefits
* * * * * 100% Unclamped Inductive Switch (UIS) test in production Low on-resistance Fast switching speed "Green" component and RoHS compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data Description and Applications
This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * * * * Motor control Transformer driving switch DC-DC Converters Power management functions Uninterrupted power supply * * * * * * Case: SOT223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See diagram below Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (approximate)
SOT223
D
G S
Top View Pin Out - Top View Equivalent Circuit
Ordering Information (Note 1)
Product DMN6068SE-13
Notes:
Marking N6068
Reel size (inches) 13
Tape width (mm) 12
Quantity per reel 2,500
1. Diodes, Inc. defines "Green" products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.'s "Green" Policy can be found on our website. For packaging details, go to our website.
Marking Information
YWW N6068
= Manufacturer's Marking N6068 = Product Type Marking Code YWW = Date Code Marking Y = Year (ex: 9 = 2009) WW = Week (01-52)
DMN6068SE
Document Number DS32033 Rev. 1 - 2
1 of 9 www.diodes.com
December 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
DMN6068SE
ADVANCE INFORMATION
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VDSS VGS EAS IAS ID IDM IS ISM Value 60 20 37.5 5.0 5.6 4.5 4.1 20.8 4.9 20.8 Unit V V mJ A A A A A
Characteristic Drain-Source voltage Gate-Source voltage Single Pulsed Avalanche Energy Single Pulsed Avalanche Current Continuous Drain current VGS = 10V
Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode)
(Note 2) (Note 7) (Note 7) (Note 4) TA = 70C (Note 4) (Note 3) (Note 5) (Note 4) (Note 5)
Thermal Characteristics @TA = 25C unless otherwise specified
Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range
Notes:
Symbol (Note 3) PD (Note 4) (Note 3) (Note 4) (Note 6) RJA RJL TJ, TSTG
Value 2.0 16.0 3.7 29.5 62.5 34 11.5 -55 to 150
Unit W mW/C
C/W C
2. AEC-Q101 VGS maximum is 16V. 3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 4. Same as note (3), except the device is measured at t 10 sec. 5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). 7. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25, VDD=50V, starting TJ = 25C.
DMN6068SE
Document Number DS32033 Rev. 1 - 2
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December 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
DMN6068SE
ADVANCE INFORMATION
Thermal Characteristics
ID Drain Current (A)
10 Limited
Max Power Dissipation (W)
RDS(on)
2.0 1.6 1.2 0.8 0.4 0.0
1
DC 1s 100ms 10ms Single Pulse T amb=25C 1ms 100s
100m
10m 100m
1
10
0
20
40
60
80
100 120 140 160
VDS Drain-Source Voltage (V)
Temperature (C)
Safe Operating Area
70
Derating Curve
Thermal Resistance (C/W)
60 50 40 30 20 10 0 100
Maximum Power (W)
Tamb=25C
100
Single Pulse Tamb=25C
D=0.5
10
D=0.2
Single Pulse D=0.05 D=0.1
1m
10m 100m
1
10
100
1k
1 100
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
DMN6068SE
Document Number DS32033 Rev. 1 - 2
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December 2009
(c) Diodes Incorporated
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DMN6068SE
ADVANCE INFORMATION
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 8) Forward Transconductance (Notes 8 & 9) Diode Forward Voltage (Note 8) Reverse recovery time (Note 9) Reverse recovery charge (Note 9) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 10) Total Gate Charge (Note 10) Gate-Source Charge (Note 10) Gate-Drain Charge(Note 10) Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10)
Notes:
Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gfs VSD trr Qrr Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf
Min 60 1.0
Typ 19.7 0.98 145 929 502 45.7 27.1 5.55 10.3 1.6 3.5 3.6 10.8 11.9 8.7
Max 0.5 100 3.0 0.068 0.100 1.15
Unit V A nA V S V ns nC pF pF pF nC nC nC nC ns ns ns ns
Test Condition ID = 250A, VGS= 0V VDS= 60V, VGS= 0V VGS= 20V, VDS= 0V ID= 250A, VDS= VGS VGS= 10V, ID= 12A VGS= 4.5V, ID= 6A VDS= 15V, ID= 12A IS= 12A, VGS= 0V IS= 12A, di/dt= 100A/s
VDS= 30V, VGS= 0V f= 1MHz VGS= 4.5V VGS= 10V VDS= 30V ID= 12A
VDD= 30V, VGS= 10V ID= 12A, RG 6.0
8. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures.
DMN6068SE
Document Number DS32033 Rev. 1 - 2
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December 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
DMN6068SE
ADVANCE INFORMATION
Typical Characteristics
T = 25C
10V
5V
T = 150C
10V
ID Drain Current (A)
4V
ID Drain Current (A)
10
4.5V
10
4.5V 4V 3.5V
1
3.5V VGS 3V
1
3V 2.5V VGS 2V
0.1
0.1
0.01 0.1
0.01
VDS Drain-Source Voltage (V)
1
10
0.1
VDS Drain-Source Voltage (V)
1
10
Output Characteristics
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50
Output Characteristics
Normalised RDS(on) and VGS(th)
10
VDS = 10V
VGS = 10V ID = 12A RDS(on)
ID Drain Current (A)
1
T = 150C T = 25C
0.1
0.01
VGS = VDS ID = 250uA
VGS(th)
1E-3 1
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance ()
100
3V 3.5V 4V
VGS Gate-Source Voltage (V)
2
3
4
5
Tj Junction Temperature (C)
0
50
100
150
Normalised Curves v Temperature
VGS
ISD Reverse Drain Current (A)
10
10
T = 150C
1
T = 25C
1
4.5V
5V
0.1
10V T = 25C
0.1
Vgs = 0V
0.01 0.01
0.1
On-Resistance v Drain Current
ID Drain Current (A)
1
10
0.01 0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage
DMN6068SE
Document Number DS32033 Rev. 1 - 2
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DMN6068SE
ADVANCE INFORMATION
Typical Characteristics - continued
10
C Capacitance (pF)
600
CISS COSS
VGS = 0V f = 1MHz
VGS Gate-Source Voltage (V)
8 6 4 2 0
VDS = 30V ID = 12A
400
200
CRSS
0 0.1
1
10
0
2
4
6
8
10
VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage
Q - Charge (nC) Gate-Source Voltage v Gate Charge
20
40
Starting T J = 25C
EAS Avalanche Energy (mJ)
IAS Avalanche Current (A)
15
30
10
20
5 100 1m
10
L Inductor (H)
Single-Pulsed Avalanche Rating
DMN6068SE
Document Number DS32033 Rev. 1 - 2
6 of 9 www.diodes.com
December 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
DMN6068SE Test Circuits ADVANCE INFORMATION
Current regulator
12V 50k Same as D.U.T
QG
VG
Q GS
Q GD V DS IG D.U.T ID V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS 90% V GS RG 10% V GS td(on) t(on) tr td(off) t(on) tr RD V DS VDD
Switching time waveforms
Switching time test circuit
DMN6068SE
Document Number DS32033 Rev. 1 - 2
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December 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
DMN6068SE
ADVANCE INFORMATION
Package Outline Dimensions
DIM A A1 A2 b b2 C
Millimeters Min Max 1.80 0.02 0.10 1.55 1.65 0.66 0.84 2.90 3.10 0.23 0.33
Inches Min Max 0.071 0.0008 0.004 0.0610 0.0649 0.026 0.033 0.114 0.122 0.009 0.013
DIM D e e1 E E1 L
Millimeters Min Max 6.30 6.70 2.30 BSC 4.60 BSC 6.70 7.30 3.30 3.70 0.90 -
Inches Min Max 0.248 0.264 0.0905 BSC 0.181 BSC 0.264 0.287 0.130 0.146 0.355 -
Suggested Pad Layout
3.8 0.15 2.0 0.079
6.3 0.248
2.0 0.079 1.5 0.059
mm inches
2.3 0.091
DMN6068SE
Document Number DS32033 Rev. 1 - 2
8 of 9 www.diodes.com
December 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
DMN6068SE
ADVANCE INFORMATION
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
DMN6068SE
Document Number DS32033 Rev. 1 - 2
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December 2009
(c) Diodes Incorporated

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